 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 1.78 0.2 1 L L FEATURES * Super Low Noise Figure & High Associated Gain * Gate Length : Lg 0.25 m * Gate Width : Wg = 200 m 1.78 0.2 NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz T 2 L 3 L 4 ORDERING INFORMATION SUPPLYING FORM STICK Tape & reel 1000 pcs./reel NE32484A-T1A Tape & reel 5000 pcs./reel L = 1.0 0.2 mm PART NUMBER NE32484A-SL NE32484A-T1 LEAD LENGTH L = 1.7 mm MIN. L = 1.0 0.2 mm MARKING T ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID IG Ptot Tch Tstg 4.0 -3.0 IDSS 100 165 150 -65 to +150 V V mA 1. 2. 3. 4. Source Drain Source Gate A mW C C RECOMMENDED OPERATING CONDITION (TA = 25 C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit V mA dBm Document No. P11785EJ3V0DS00 (3rd edition) (Previous No. TC-2316) Date Published July 1996 P Printed in Japan (c) 0.1 1.7 MAX. 0.5 TYP. 0.5 TYP. 1991 NE32484A ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm NF Ga 10.0 15 -0.2 45 MIN. TYP. 0.5 40 -0.8 60 0.6 11.0 0.7 MAX. 10 70 -2.0 UNIT TEST CONDITIONS VGS = -3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 A VDS = 2 V, ID = 10 mA VDS = 2 V, ID = 10 mA, f = 12 GHz A mA V mS dB dB TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 Ptot - Total Power Dissipation - mW 50 ID - Drain Current - mA 200 40 30 20 10 -0.4 V -0.6 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V -0.2 V 150 100 50 0 50 100 150 200 250 0 1 2 3 4 5 TA - Ambient Temperature - C DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE MSG. - Maximum Stable Gain - dB MAG. - Maximum Available Gain - dB |S21s|2 - Forward Insertion Gain - dB 50 VDS = 2 V ID - Drain Current - mA 40 24 VDS - Drain to Source Voltage - V MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY VDS = 2 V ID = 10 mA 20 MSG. 16 |S21S|2 12 MAG. 30 20 10 0 -2.0 8 4 1 2 4 6 8 10 14 20 30 f - Frequency - GHz -1.0 VGS - Gate to Source Voltage - V 0 Gain Calculations | S21 | | S12 | | S21 | K K2 - 1 | S12 | K= 1 + | |2 - | S11 |2 - | S22 |2 2 | S12 || S21 | MSG. = MAG. = ( ) = S11 S22 - S21 S12 2 NE32484A NOISE FIGURE, ASSOCIATED GAIN vs. RATIO OF DRAIN CURRENT TO ZERO-GATE VOLTAGE CURRENT 24 VDS = 2 V ID = 10 mA Ga - Associated Gain - dB NF - Noise Figure - dB NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 5 3 VDS = 2 V f = 12 GHz 15 20 2 Ga 10 1 NF 5 0 4 0 40 60 100 Ga - Associated Gain - dB 4 NF - Noise Figure - dB Ga 3 16 2 12 1 NF 0 1 2 4 6 8 10 14 20 30 8 1 2 4 6 8 10 20 IDS/IDSS - Ratio of Drain Current to Zero-Gate Voltage Current - % f - Frequency - GHz 3 NE32484A S-Parameters VDS = 2 V, ID = 10 mA START 500 MHz, STOP 18 GHz, STEP 500 MHz Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz S11 1.0 0.5 2.0 +135 S12 +90 +45 0 0.5 5 4 3 3 1.0 2.0 180 12 4 5 0 2 -0.5 -1.0 1 -2.0 Rmax. = 1 -135 -90 -45 Rmax. = 0.25 S21 +90 +135 1 2 3 180 0 0 0.5 4 4 5 5 3 +45 0.5 S22 1.0 2.0 1.0 2.0 2 -135 -90 -45 Rmax. = 5 -0.5 -1.0 1 -2.0 Rmax. = 1 4 NE32484A S-Parameters MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY MHz MAG. S11 ANG. (deg.) 500 1 000 1 500 2 000 2 500 3 000 3 500 4 000 4 500 5 000 5 500 6 000 6 500 7 000 7 500 8 000 8 500 9 000 9 500 10 000 10 500 11 000 11 500 12 000 12 500 13 000 13 500 14 000 14 500 15 000 15 500 16 000 16 500 17 000 17 500 18 000 .999 .990 .976 .952 .934 .908 .884 .858 .830 .802 .775 .746 .725 .702 .681 .659 .645 .625 .609 .592 .574 .556 .539 .526 .511 .499 .487 .476 .463 .449 .433 .420 .404 .385 .373 .357 -8.3 -16.6 -24.9 -32.7 -40.5 -48.2 -55.8 -63.1 -70.5 -77.5 -84.5 -91.0 -97.4 -103.5 -109.2 -114.3 -119.4 -124.2 -128.9 -134.2 -139.4 -144.6 -149.9 -155.7 -161.1 -166.2 -171.1 -175.9 179.9 175.4 169.9 164.6 158.5 151.0 143.6 135.1 4.699 4.678 4.611 4.508 4.424 4.328 4.222 4.127 4.022 3.906 3.793 3.669 3.552 3.426 3.324 3.223 3.126 3.050 2.984 2.921 2.868 2.812 2.759 2.705 2.645 2.595 2.543 2.496 2.464 2.441 2.408 2.383 2.377 2.365 2.350 2.321 MAG. S21 ANG. (deg.) 171.5 162.9 154.1 146.0 138.0 130.0 122.2 114.7 107.2 99.9 92.7 85.8 79.0 72.7 66.3 60.1 54.4 48.4 43.1 37.1 31.5 25.7 20.0 14.5 8.3 3.1 -2.3 -8.2 -13.6 -19.5 -24.6 -30.5 -36.4 -42.3 -48.6 -55.0 .009 .019 .027 .035 .043 .051 .056 .062 .067 .072 .075 .078 .081 .083 .085 .088 .090 .092 .094 .097 .098 .100 .101 .102 .105 .107 .110 .113 .115 .120 .122 .125 .130 .134 .135 .143 MAG. S12 ANG. (deg.) 81.1 78.1 73.5 67.5 61.4 58.8 53.8 48.5 44.5 40.4 36.3 32.6 29.6 27.2 24.9 21.9 19.9 17.3 15.6 14.1 11.3 9.6 6.7 6.1 4.1 1.9 -.5 -1.6 -4.0 -7.4 -9.9 -13.0 -16.5 -19.2 -22.7 -26.3 .667 .663 .654 .641 .626 .612 .598 .576 .559 .538 .516 .497 .481 .470 .460 .454 .450 .450 .449 .441 .433 .429 .424 .423 .421 .429 .439 .448 .460 .468 .484 .486 .489 .499 .507 .518 MAG. S22 ANG. (deg.) -6.2 -12.3 -18.2 -24.2 -29.7 -35.8 -41.2 -47.1 -52.9 -58.7 -64.7 -70.9 -76.7 -82.9 -88.3 -93.6 -99.5 -104.7 -109.8 -116.2 -121.4 -128.7 -134.1 -139.5 -146.5 -153.1 -157.9 -163.5 -168.9 -174.1 -179.4 175.2 170.6 164.2 158.1 152.3 5 NE32484A AMP. Parameters VDS = 2 V, ID = 10 mA FREQUENCY GUmax. MHz 500 1 000 1 500 2 000 2 500 3 000 3 500 4 000 4 500 5 000 5 500 6 000 6 500 7 000 7 500 8 000 8 500 9 000 9 500 10 000 10 500 11 000 11 500 12 000 12 500 13 000 13 500 14 000 14 500 15 000 15 500 16 000 16 500 17 000 17 500 18 000 dB 41.44 32.97 28.97 25.67 24.04 22.31 21.03 19.86 18.79 17.79 16.90 16.06 15.39 14.73 14.17 13.64 13.22 12.82 12.48 12.12 11.79 11.47 11.17 10.91 10.61 10.41 10.21 10.03 9.91 9.80 9.69 9.56 9.48 9.42 9.36 9.26 13.30 12.82 12.38 12.28 12.13 12.01 12.01 12.12 12.20 12.02 12.23 GAmax. dB |S21|2 dB 13.44 13.40 13.28 13.08 12.92 12.73 12.51 12.31 12.09 11.83 11.58 11.29 11.01 10.70 10.43 10.17 9.90 9.68 9.49 9.31 9.15 8.98 8.81 8.64 8.45 8.28 8.11 7.94 7.83 7.75 7.63 7.54 7.52 7.48 7.42 7.31 |S12|2 dB -40.86 -34.30 -31.48 -29.02 -27.43 -25.82 -24.99 -24.09 -23.41 -22.84 -22.48 -22.17 -21.78 -21.64 -21.36 -21.11 -20.94 -20.77 -20.57 -20.30 -20.17 -20.02 -19.88 -19.81 -19.60 -19.39 -19.14 -18.96 -18.76 -18.39 -18.26 -18.06 -17.75 -17.45 -17.38 -16.92 .07 .11 .16 .25 .30 .33 .39 .44 .49 .54 .60 .66 .70 .75 .79 .83 .86 .89 .91 .93 .97 1.00 1.03 1.05 1.07 1.07 1.06 1.06 1.04 1.02 1.01 1.02 1.00 .98 .98 .95 K Delay ns .048 .048 .048 .045 .044 .044 .044 .042 .041 .041 .040 .038 .038 .035 .036 .034 .031 .033 .030 .033 .031 .032 .032 .030 .034 .029 .030 .033 .030 .033 .028 .033 .033 .033 .035 .036 31.191 28.650 36.156 33.054 29.569 29.880 28.912 27.197 25.792 26.436 26.491 27.296 25.875 27.068 26.311 27.718 30.819 26.188 25.806 23.528 22.859 21.908 22.287 22.459 22.098 22.242 22.991 22.729 21.370 21.084 20.924 19.871 20.113 Mason's U dB 35.043 38.352 G1 dB 25.44 17.05 13.27 10.30 8.97 7.55 6.60 5.80 5.07 4.47 3.98 3.54 3.24 2.94 2.70 2.48 2.34 2.15 2.01 1.87 1.73 1.61 1.49 1.40 1.31 1.24 1.18 1.11 1.05 .98 .90 .84 .77 .70 .65 .59 G2 dB 2.56 2.52 2.42 2.30 2.16 2.04 1.92 1.75 1.63 1.48 1.34 1.23 1.14 1.09 1.03 1.00 .98 .98 .98 .94 .90 .88 .86 .86 .85 .89 .93 .97 1.03 1.07 1.16 1.17 1.19 1.24 1.29 1.36 6 NE32484A Noise Parameters VDS = 2 V ID = 10 mA 1.0 2.0 0.5 0.5 10 opt 0 1 dB 1.5 dB 2.0 dB -0.5 -2.0 -1.0 f = 12 GHz -1.0 START 2 GHz STOP 18 GHz STEP 2 GHz -0.5 -2.0 16 18 1.0 0 12 2 14 1.0 8 6 4 1.0 2.0 VDS = 2 V ID = 10 mA opt. MAG. 0.85 0.82 0.77 0.70 0.64 0.58 0.54 0.51 0.48 ANG. (deg.) 18 45 71 96 118 152 175 -161 -138 0.39 0.32 0.27 0.20 0.13 0.08 0.08 0.06 0.06 Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 NFmin. (dB) 0.31 0.33 0.38 0.43 0.51 0.60 0.74 0.90 1.10 Ga (dB) 18.5 16.1 14.2 12.5 11.7 11.0 10.1 9.4 9.0 Rn/50 7 NE32484A RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (C10535EJ7V0IF00). Soldering process Infrared ray reflow Soldering conditions Peak package's surface temperature: 230 C or below, Reflow time: 30 seconds or below (210 C or higher), Number of reflow process: 1, Exposure limitNote: None Terminal temperature: 230 C or below, Flow time: 10 seconds or below, Exposure limitNote: None Symbol IR30-00 Partial heating method Note Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 C and relative humidity at 65 % or less. Caution Do not apply more than a single process at once, except for "Partial heating method". PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the Japanese law concerned and so on, especially in case of removal. 8 NE32484A [MEMO] 9 NE32484A [MEMO] 10 NE32484A [MEMO] 11 NE32484A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2 |
Price & Availability of NE32484A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |